Temperature Dependent Band Gap Correction Model Using Tight-Binding Approach for UTB Device Simulations

the use of appropriate madm model for ranking the vendors of mci equipments using fuzzy approach

abstract nowadays, the science of decision making has been paid to more attention due to the complexity of the problems of suppliers selection. as known, one of the efficient tools in economic and human resources development is the extension of communication networks in developing countries. so, the proper selection of suppliers of tc equipments is of concern very much. in this study, a ...

Finite-Temperature Full Random-Phase Approximation Model of Band Gap Narrowing for Silicon Device Simulation

An analytical model of the band gap narrowing (BGN) in silicon was derived from a non-self-consistent nite-temperature full Random-Phase Approximation (RPA) formalism. Exchange-correlation self-energy of the free carriers and correlation energy of the carrier-dopant interaction were treated on an equal basis. The dispersive quasi-particle shift (QPS) in RPA quality was numerically calculated fo...

A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation

We present a new band gap narrowing model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. This unified treatment is especially useful for accurate device simulation. As a particular example we studied with our two-dimensional device simulator MINIMOS-NT the electrical behavior of a graded composition Si/SiGc HBT using a hydrodynamic transport...

Environment-dependent tight-binding potential model.

We present a tight-binding model which goes beyond the traditional two-center approximation and allows the hopping parameters and the repulsive energy to be dependent on the binding environment. Using carbon as an example, we show that the approach improves remarkably the transferability of the tight-binding model. The properties of the higher-coordinated metallic structures are well described ...

Temperature dependent band gap in PbX (X=S, Se, Te)